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| HUR30100PT, HUR30120PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C(TAB) A C A C A Dimensions TO-247AD Dim. A B C D E F G H Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 VRRM V 1000 1200 J K L M N HUR30100PT HUR30120PT Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=125oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=9A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive o Maximum Ratings 35 2 x 15 90 8.7 0.9 -55...+175 175 -55...+150 95 0.4...0.6 2 Unit A A mJ A o C W Nm g HUR30100PT, HUR30120PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=15A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 100 0.5 1.79 2.75 1.6 0.5 Unit uA mA V K/W ns A IR VF RthJC RthCH trr IRM IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC VR=100V; IF=25A; -diF/dt=100A/us; TVJ=100 C o 40 4.5 FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR30100PT, HUR30120PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 40 A 35 IF 30 25 20 15 10 5 0 0 1 2 3 VF V 4 0.5 0.0 100 10 TVJ=150C TVJ=100C TVJ= 25C 3.0 TVJ= 100C C V = 600V R 2.5 50 TVJ= 100C A VR = 600V Qr 2.0 1.5 1.0 IF= 30A IF= 15A IF= 7.5A IRM 40 30 20 IF= 30A IF= 15A IF= 7.5A 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 180 ns TVJ= 100C VR = 600V Fig. 3 Peak reverse current IRM versus -diF/dt 120 V VFR 80 TVJ= 100C IF = 15A VFR tfr 2.0 1.2 us tfr 0.8 1.5 Kf 1.0 IRM trr 160 IF= 30A IF= 15A IF= 7.5A 140 40 0.5 Qr 0.4 120 0.0 0 40 80 120 C 160 TVJ 100 0 200 400 600 -diF/dt 800 A/us 1000 0 0 200 400 0.0 600 A/us 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 10 K/W 1 ZthJC 0.1 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.9084 0.3497 0.3419 ti (s) 0.0052 0.0003 0.0165 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case |
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